f dg 630 3n features * the pinouts are symmetrical; pin 1 and 4 are interchangeable. units inside the carrier can be of either orientation and will not affect the functionality of the device. absolute maximum ratings t a = 25c unless otherwise noted symbol parameter f dg 630 3 n units v dss drain-source voltage 25 v v gss gate-source voltage 8 v i d drain/output current - continuous 0.5 a - pulsed 1.5 p d maximum power dissipation (note 1 ) 0.3 w t j ,t stg operating and storage temperature range -55 to 150 c esd electrostatic discharge rating mil-std-883d human body model (100 pf / 1500 w ) 6 .0 kv thermal characteristics r q ja thermal resistance, junction-to-ambient 415 c/w 25 v, 0.50 a continuous, 1.5 a peak. r ds(on) = 0.45 w @ v gs = 4.5 v, r ds(on) =0.60 w @ v gs = 2.7 v. very low level gate drive requirements allowing direct operation in 3 v circuits (v gs(th) < 1.5 v). gate-source zener for esd ruggedness (>6 kv human body model). compact industry standard sc70-6 surface mount package. sot-23 supersot t m -8 so-8 sot-223 sc70-6 supersot t m -6 1 or 4 * 6 or 3 5 or 2 4 or 1 * 2 or 5 3 or 6 sc70-6 g1 d2 s1 d1 s2 g2 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com smd type smd type smd type product specification
electrical characteristics (t a = 25 o c unless otherwise noted ) symbol parameter conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 25 v d bv dss / d t j breakdown voltage temp. coefficient i d = 250 a , referenced to 25 o c 26 mv/ o c i dss zero gate voltage drain current v ds = 20 v, v gs = 0 v 1 a t j = 5 5c 10 a i gss gate - body leakage current v gs = 8 v, v ds = 0 v 100 na on characteristics (note 2) v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 0.65 0.8 1.5 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -2.6 mv/ o c r ds(on) static drain-source on-resistance v gs = 4.5 v, i d = 0.5 a 0.34 0.45 w t j =12 5c 0.55 0.77 v gs = 2.7 v, i d = 0.2 a 0.44 0.6 i d(on) on-state drain current v gs = 2.7 v, v ds = 5 v 0.5 a g fs forward transconductance v ds = 5 v, i d = 0.5 a 1.45 s dynamic characteristics c iss input capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz 50 pf c oss output capacitance 28 pf c rss reverse transfer capacitance 9 pf switching ch aracteristics (note 2 ) t d(on ) turn - on delay time v dd = 5 v, i d = 0.5 a, v gs = 4.5 v, r gen = 50 w 3 6 ns t r turn - on rise time 8.5 18 ns t d(off) turn - off delay time 17 30 ns t f turn - off fall time 13 25 ns q g total gate charge v ds = 5 v, i d = 0.5 a, v gs = 4.5 v 1.64 2.3 nc q gs gate-source charge 0.38 nc q gd gate-drain charge 0.45 nc drain-source diode characteristics and maximum ratings i s maximum continuous source current 0.25 a v sd drain-source diode forward voltage v gs = 0 v, i s = 0.25 a (note 2 ) 0.8 1.2 v notes: 1 . r q ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. r q ja = 415 o c/w on minimum pad mounting on fr-4 board in still air. 2. pulse test: pulse width < 300 s, duty cycle < 2.0%. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com f dg 630 3n smd type smd type smd type product specification
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